Rambus announced its Mobile XDR memory architecture for next-generation mobile products, combining high-bandwidth and low-power

Rambus announced its Mobile XDR memory architecture for next-generation mobile products, combining high-bandwidth and low-power

Micron Technology Inc. and Nanya Technology Corp. have unveiled a 42-nm DRAM process technology with copper metallization that has been used to produce a 2-Gbit DDR3 memory.

Silicon Storage Technology (SST) announced that it has entered into a definitive merger agreement with Microchip Technology Incorporated under which Microchip will acquire all of SST's outstanding common stock for USD 2.85 per share in cash

MoSys Inc. said it will make memory chips using a novel high-speed interface for a broad range of networking and storage markets as the first of a planned family of standard parts for the company that is expanding beyond its roots as a supplier of silicon cores.

South Korea's Samsung Electronics Co. Ltd. has rolled out the industry's first 30-nm-class DRAMs.

Taiwanese manufacturer of industrial-grade NAND flash storage devices, APRO has teamed with European flash memory specialists, ProSaleTech and Phoenix Systems Engineering and Technologies (PST).

Intel Corp. and Micron Technology Inc. have regained the process technology lead in NAND flash, by rolling out the first in a family of 25-nm devices.

South Korean giant Samsung Electronics reported strong sales and profit for the fourth quarter of 2009, citing a 50 percent year-to-year improvement in semiconductor revenue and a seasonal increase in consumer electronics sales.

LSI Corp. (Milpitas, Calif.) and Seagate Technology Inc. (Scotts Valley, Calif.) are going to work together on PCI-based solid-state storage for data centers.